cystech electronics corp. spec. no. : c316m3 issued date : 2007.03.28 revised date : 2013.08.07 page no. : 1/6 BTC2881M3 cystek product specification general purpose npn epitaxial planar transistor BTC2881M3 bv ceo 200v i c 1a r cesat(max) 0.86 features ? high breakdown voltage, bv ceo 200v ? large continuous collector current capability ? low collector saturation voltage ? complementary to bta1201m3 ? pb-free lead plating and halogen-free package symbol outline absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 300 v collector-emitter voltage v ceo 200 v emitter-base voltage v ebo 6 v collector current i c 1 a base current i b 0.2 a 0.6 w 1 (note 1) w power dissipation pd 2 (note 2) w junction temperature tj 150 c storage temperature tstg -55~+150 c note : 1. when mounted on fr-4 pcb with area measuring 10101 mm 2 . when mounted on ceramic w ith area measuring 40401 mm sot-89 BTC2881M3 b base c collector e emitter b c e
cystech electronics corp. spec. no. : c316m3 issued date : 2007.03.28 revised date : 2013.08.07 page no. : 2/6 BTC2881M3 cystek product specification characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 300 - - v i c =10 a bv ceo 200 - - v i c =10ma bv ebo 6 - - v i e =10 a i cbo - - 100 na v cb =300v i ebo - - 100 na v eb =6v *v ce(sat) - 0.2 0.3 v i c =500ma, i b =50ma *v ce(sat) - - 0.6 v i c =700ma, i b =35ma *v be(sat) - - 1 v i c =500ma, i b =50ma *v be(on) - - 1 v v ce =5v, i c =500ma *h fe 1 120 - - - v ce =5v, i c =50ma *h fe 2 120 - 320 - v ce =5v, i c =100ma *h fe 3 30 - - - v ce =5v, i c =700ma f t - 120 - mhz v ce =5v, i c =100ma cob - - 30 pf v cb =10v, i e =0a,f=1mhz *pulse test: pulse width 380 s, duty cycle 2% classification of h fe 2 rank y g range 120~240 160~320 ordering information device package shipping marking BTC2881M3 sot-89 (pb-free lead plating an d halogen-free package) 1000 pcs / tape & reel cb recommended soldering footprint
cystech electronics corp. spec. no. : c316m3 issued date : 2007.03.28 revised date : 2013.08.07 page no. : 3/6 BTC2881M3 cystek product specification characteristic curves current gain vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) current gain---hfe vce=2v vce=5v saturation voltage vs collector current 10 100 1000 10000 1 10 100 1000 collector current---ic(ma) saturation voltage---(v) ic=10ib vcesat ic=20ib saturation voltage vs collector current 100 1000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) vbesat@ic=10ib on voltage vs collector current 100 1000 1 10 100 1000 collector current---ic(ma) on voltage---(mv) vbeon@vce=5v power derating curve 0 0.5 1 1.5 2 2.5 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w) see note 2 on page 1 see note 1 on page 1
cystech electronics corp. spec. no. : c316m3 issued date : 2007.03.28 revised date : 2013.08.07 page no. : 4/6 BTC2881M3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c316m3 issued date : 2007.03.28 revised date : 2013.08.07 page no. : 5/6 BTC2881M3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 5 +1/-1 seconds 260 +0/-5 c recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c316m3 issued date : 2007.03.28 revised date : 2013.08.07 page no. : 6/6 BTC2881M3 cystek product specification sot-89 dimension inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1732 marking: cb e f g c b a i d h 3 2 1 3-lead sot-89 plastic surface mounted package cystek package code: m3 style: pin 1. base 2. collector 3. emitter device code hfe rank date code 0.1811 4.40 4.60 f 0.0591 typ 1.50 typ b 0.1551 0.1673 3.94 4.25 g 0.1181 typ 3.00 typ c 0.0610 ref 1.55 ref h 0.0551 0.0630 1.40 1.60 d 0.0906 0.1024 2.30 2.60 i 0.0138 0.0173 0.35 0.44 e 0.0126 0.0205 0.32 0.52 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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